Please cite this paper if you use this User-in-the-Box repository in your research. @inproceedings{ikkala2022, author = {Ikkala, Aleksi and Fischer, Florian and Klar, Markus and Bachinski, Miroslav ...
Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Supports most practical Explicit Runge-Kutta (ERK) methods. Tested on SD1.5, SDXL, and SD3. Decrease it to set more strict tolerances (better results) in exchange for slower inference times. Increase ...
Abstract: Detailed temperature field distribution of high-power insulated gate bipolar transistor (IGBT) modules is essential information for reliability analysis and thermal design of power ...
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