NTT researchers have addressed two primary loss mechanisms in AlN power transistors: the contact resistance and the channel resistance. To understand the potential of aluminum nitride (AlN) in power ...
For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...
By applying voltage to electrically control a new "transistor" membrane, researchers at Lawrence Livermore National Laboratory (LLNL) achieved real-time tuning of ion separations—a capability ...
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
An important figure of merit for all precision constant current sources is their active impedance. Which is to say, just how “constant” is their output held against changes in applied voltage?
Adding big blocks of SRAM to collections of AI tensor engines, or better still, a waferscale collection of such engines, turbocharges AI inference, as has ...
The clip is the product. Governance is incidental. Rampant litigation against 401(k) sponsors is narrowing employees’ investment choices and eroding their retirement wealth. Revisiting the CBS ...
Abstract: Wireless power transfer (WPT) technology is the most potential power replenishment for unmanned underwater vehicles (UUVs) due to its safety and automation. Furthermore, lightweight design ...
The INA3221 is a 3 channel voltage and current sensor, which work with I2C. The INA3221 is a 3 channel measuring device to measure voltage. Derived from that voltage and a given shunt, the library ...
The INA219 is a voltage, current and power measurement device. A few important maxima, see datasheet, chapter 7, esp 7.5 Datasheet states it supports 1 KHz .. 2.56 MHz. Note: higher speeds and longer ...
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