Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Solid-state device technologies, which are available to the amplifier designer, fall, broadly, into three categories: bipolar junction transistors (BJTs) and junction diodes; junction field effect ...
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