A research team from IBM and the Georgia Institute of Technology has demonstrated the first silicon-germanium transistor able to operate at frequencies above 500 GHz. Though the record performance was ...
Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...
(Nanowerk News) A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden ...
AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have made ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
There was once a company which achieved the remarkable feat of getting the first junction transistor to market. The company manufactured the device in 1952, the same year as the inventors of the ...
Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
It might look like something out of Tron, but you’re actually looking at a new type of transistor made out of germanium—which is four times faster than those currently in use. The new transistor, ...
A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology ...
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